Xilinx - Xilinx Samsung SmartSSD

Computational storage drive - Enterprise - 3.84 TB - internal - 2.5" - U.2 PCIe 3.0 x4 (NVMe)

    Xilinx
    A-U2-P04T-PQ-G
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    Main Specifications
    Product Description Xilinx Samsung SmartSSD - computational storage drive - Enterprise - 3.84 TB - U.2 PCIe 3.0 x4 (NVMe)
    Type Computational storage drive - internal
    Capacity 3.84 TB
    Form Factor 2.5"
    Interface U.2 PCIe 3.0 x4 (NVMe)
    Drive Class Enterprise
    Features V-NAND Technology, Power Loss Protection (PLP), NVM Express (NVMe) 1.3, programmable hardware accelerator, NVMe Management Interface (NVMe-MI) 1.0, Inrush Current Protection, Xilinx Kintex Ultrascale+ KU15P FPGA
    Dimensions (WxDxH) 2.4 in x 3.9 in x 0.6 in
    Weight 14.11 oz
    General
    Device Type Computational storage drive - internal
    Capacity 3.84 TB
    Form Factor 2.5"
    Interface U.2 PCIe 3.0 x4 (NVMe)
    Features V-NAND Technology, Power Loss Protection (PLP), NVM Express (NVMe) 1.3, programmable hardware accelerator, NVMe Management Interface (NVMe-MI) 1.0, Inrush Current Protection, Xilinx Kintex Ultrascale+ KU15P FPGA
    Width 2.4 in
    Depth 3.9 in
    Height 0.6 in
    Weight 14.11 oz
    Power
    Power Consumption 25 Watt (active) ¦ 18 Watt (idle)
    Environmental Parameters
    Min Operating Temperature 32 °F
    Max Operating Temperature 158 °F
    Min Storage Temperature -40 °F
    Max Storage Temperature 185 °F
    Shock Tolerance (non-operating) 1500 g @ 0.5 ms half-sine wave
    Vibration Tolerance (non-operating) 20 g @ 10-2000 Hz
    Performance
    Drive Writes Per Day (DWPD) 1
    Drive Class Enterprise
    Internal Data Rate 3300 MBps (read) / 2000 MBps (write)
    4KB Random Read 110000 IOPS
    4KB Random Write 800000 IOPS
    Reliability
    MTBF 2,000,000 hours
    Non-Recoverable Errors 1 per 10^17
    Expansion & Connectivity
    Interfaces 1 x PCI Express 3.0 x4 (NVMe)
    Compatible Bay 2.5"

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